Method of producing a semiconductor light emitting device disposed in an insulating substrate

ABSTRACT

A semiconductor light emitting device includes a vertical aperture produced at a main surface of a semi-insulating or insulating substrate, a transverse aperture provided in the substrate communicating with the vertical aperture, a conducting semiconductor layer buried in the vertical aperture and the transverse aperture, a groove produced by etching the substrate from the surface thereof until reaching the conducting semiconductor layer at a portion of the transverse aperture, and a light emitting element produced in the groove, and the light emitting region of the element being buried in the groove and connected with the buried conducting semiconductor layer. Accordingly, no pn junction exists at the periphery of the light emitting region, and a semiconductor light emitting element of quite low parasitic capacitance is obtained at high yield. A planar structure in which two electrodes are produced at the same plane is obtained, resulting in ease of integration and enhancement of the integration density.

This application is a division of prior application Ser. No. 07/767,685,filed on Sep. 30, 1991, now U.S. Pat. No. 5,194,399, which is adivisional application of prior application Ser. No. 07/607,044, filedon Oct. 31, 1990,now U.S. Pat. No. 5,100,853, which is a divisionalapplication of prior application Ser. No. 07/227,124, filed Aug. 2,1988, now U.S. Pat. No. 5,003,358.

FIELD OF THE INVENTION

The present invention relates to a semiconductor light emitting deviceand production method thereof, and more particularly to an enhancementin operation speed and integration density.

BACKGROUND OF THE INVENTION

FIG. 5 shows a prior art buried type semiconductor laser as asemiconductor light emitting device.

As illustrated in FIG. 5, a prior art buried type semiconductor laserstarts with an n-type InP substrate 1. A p-type InP blocking layer 2, ann-type InP blocking layer 3, and an InGaAsP active layer 70 aresuccessively grown on the n-type InP substrate 1 by such as liquid phaseepitaxy. A V-shaped groove 60 is produced through three layers 70, 3,and 2 so as to reach into the substrate 1 such as by etching. An n-typeInP cladding layer 51 is buried in the V-shaped groove 60 and an InGaAsPactive layer 71 is produced on the n-type InP cladding layer 51. Ap-type InP cladding layer 80 is grown on the InGaAsP active layer 71 inthe groove 60 and on the InGaAsP active layer 70 at outside the groove60 and the surface thereof is made flat. A p-type InGaAsP contact layer90 is produced on the p-type InP cladding layer 80. A p side electrode100 is provided on the p-type InGaAsP contact layer 90 and an n sideelectrode 110 is provided on the n-type InP substrate 1.

The device operates as follows.

When a voltage is applied between the p side electrode 100 and the nside electrode, a current flows only through the V-shaped groove 60which is between the p-type InP blocking layer 2 and the n-type InPblocking layer 3. The current stimulates emission of laser light at theInGaAsP active layer 71 buried in the V-shaped groove 60.

In this prior art buried type layer of such a construction, the positioncontrol of the InGaAsP active layer 71 in the V-shaped groove 60 isdifficult because of the shape of the groove. Further, due to pnjunctions existing at the periphery of the V-shaped groove the parasiticcapacitance amounts to a large resulting in leakage current andlimitation of response speed. In addition, since the p side electrode100 and the n side electrode 110 are produced at opposing surfaces ofthe n-type InP substrate 1, the device is difficult to integrate withother electronic elements.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor lightemitting device with reduced criticality in controlling the position ofthe active layer and preventing leakage current.

Another object of the present invention is to provide a semiconductorlight emitting device having reduced parasitic capacitance and improvedhigh speed response.

Still another object of the present invention is to provide such adevice with a planar structure to enhance its integration density.

Yet another object of the present invention is to provide a method forproducing such a device.

Other objects and advantages of the present invention will becomeapparent from the detailed description given hereinafter; it should beunderstood, however, that the detailed description and specificembodiment are given by way of illustration only, since various changesand modifications within the spirit and scope of the invention willbecome apparent to those skilled in the art from this detaileddescription.

According to the present invention, there is provided a semiconductorlight emitting device comprising a vertical aperture produced at themain surface of a semi-insulating or insulating substrate, a transverseaperture communicated with the vertical aperture, a conductingsemiconductor layer buried in the vertical aperture and the transverseaperture, a groove produced by etching the semi-insulating or insulatingsubstrate from the surface thereof to one end portion of the transverseaperture, a light emitting element produced in the groove, including alight emitting region buried in the groove. Thus., the light emittingregion is buried in the substrate, thereby making the currentconfinement complete. Further, since there is no pn junction at theperiphery of the light emitting element, parasitic capacitances aregone. Furthermore, since one of two electrodes is taken to the surfaceof the substrate through the semiconductor layer buried in thetransverse aperture, a planar structure is obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(a)-1(e) are a diagram showing a production process of asemiconductor light emitting device according to an embodiment of thepresent invention;

FIG. 2 is a perspective view showing a semiconductor light emittingdevice according to an embodiment of the present invention;

FIGS. 3(a)-3(e) are a diagram showing a production process of asemiconductor light emitting device according to another embodiment ofthe present invention;

FIGS. 4(a)-4(c) are cross sectional views showing a production processof a semiconductor light emitting device according to still anotherembodiment of the present invention; and

FIG. 5 is a cross sectional view showing a prior art semiconductor lightemitting device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

An embodiment of the present invention will be described in detail withreference to the drawings.

FIG. 1 shows a production process of a semiconductor light emittingdevice according to a process embodiment of the present invention. InFIG. 1, reference numeral 10 designates a substrate such as asemi-insulating InP substrate. An InGaAsP layer 20 is produced on theInP substrate 10. A semi-insulating InP growth layer 30 is produced onthe InGaAsP layer 20. Photoresist 40 is plated on the InP growth layer30. An n-type InP layer 50 is buried in the vertical aperture 60A andthe transverse aperture 60B communicating therewith. An n-type InPcladding layer 51, an InGaAsP active layer 70, and a p-type InP claddinglayer 80 are buried in a groove 60C produced by etching until reachingthe InGaAsP layer 20 at the other end of the transverse aperture 60B. Ap-type InGaAsP contact layer 90 is produced on the p-type InP claddinglayer 80 also in the groove 60C. A p side electrode 100 is provided onthe contact layer 90 and an n side electrode 110 is provided on then-type InP layer 50. The n-type or p-type InP layers 50, 51, 80 haveimpurity concentration of about 1×10¹⁸ /cm³ and the p-type InGaAsPcontact layer 90 has impurity concentration of about 1×10¹⁹ /cm³.

The production process will be described.

First of all, as shown in FIG. 1(a), an InGaAsP layer 20 and asemi-insulating InP growth layer 30 are produced successively on asemi-insulating InP substrate 10 by a vapor phase epitaxy. Thereafter,photoresist 40 is patterned by photolithography.

Next, as shown in FIG. 1(b), the semi-insulating InP growth layer 30 isetched by an etchant such as hydrochloric acid up until reaching theInGaAsP layer 20 thereby to produce a vertical aperture 60A, andthereafter, the InGaAsP layer 20 is selectively etched by an etchantsuch as mixture solution of sulfuric acid, hydrogen peroxide, and water,thereby producing a transverse aperture 60B.

Next, as shown in FIG. 1(c), a region 50 of n-type InP is deposited invertical aperture 60A and transverse aperture 60B.

Next, as shown in FIG. 1(d), a region of the semi-insulating InP growthlayer 30 positioned above end of the n-type InP layer 50 is etched untilthe n-type InP layer 50 is reached to produce a groove 60C.

Thereafter, as shown in FIG. 1(e), an n-type InP cladding layer 51, anInGaAsP active layer 70, a p-type InP cladding layer 80, and a p-typeInGaAsP contact layer 90 are successively grown on the n-type InP layer50 in the groove 60C, and a buried type laser is produced buried in thesemi-insulating InP growth layer 30. Thereafter, a p side electrode 100and an n side electrode 110 are produced on the n-type InP layer 50 andthe p-type InGaAsP contact layer 90, respectively, at the same plane.

The operation of the semiconductor light emitting device produced assuch will be described.

In FIG. 1(e), a current flowing from the p side electrode 100 and the ntype electrode 110 is converted into a light output by the InGaAsPactive layer 70 buried in the semi-insulating InP growth layer 30. Then,since the semi-insulating InP growth layer 30 is provided at theperiphery of the InGaAsP active layer 70 so as to surround the same,current does not leak at the periphery of the active layer 70.Furthermore, since the n-type InP cladding layer 51 is connected withthe conducting n-type InP layer 50 buried in the transverse aperture60B, it is possible to take the n side electrode 110 up to the surfaceof a wafer, thereby obtaining a planar structure.

While the n-type InP layer 50 in the vertical aperture is produced in astripe configuration in FIG. 1, the n-type InP layer may be producedonly at a part of the region lying outside the light emitting region.FIG. 2 shows an embodiment of the present invention having an n-type InPlayer 52 of such a construction. Also in this embodiment, the sameeffects as in the first embodiment are obtained.

FIG. 3 shows a production process according to another processembodiment of the present invention.

In this second process embodiment, a vertical aperture 11 is produced byetching a semi-insulating InP substrate 10. A SiO₂ mask 12 is producedby sputtering and photolithography (FIG. 3(a)).

Next, as shown in FIG. 3(b), the vertical aperture 11 is further etchedinto substrate 10, and a SiO₂ mask 13 is produced at a bottom portion ofthe aperture 11 by evaporation. Further etching is employed to produce atransverse aperture 14 as shown in FIG. 3(c).

Next, as shown in FIG. 3(d), an n-type InP layer 50 is grown buried inthe vertical aperture 11 and the transverse aperture 14, and thereafter,a groove is produced by etching and a buried type laser is produced inthe groove as shown in FIG. 3(e) by the same process as that employed inthe process of FIG. 1.

This process embodiment has an advantage in that only two crystallinegrowth steps are required, contrary to the three crystalline growthsteps required in the first process embodiment.

FIG. 4 shows a production process according to still another processembodiment of the present invention.

First of all, an n-type InP layer 50 is buried at a desired depth in thesemi-insulating InP substrate 10. Thereafter, a semi-insulating InPgrowth layer 30 is buried in a portion region of the n-type InP layer 50in depth shallower than the n-type InP layer 50. A partially completeddevice in which the n-type InP layer 50 is produced in a verticalaperture and a transverse aperture similar to the embodiments of FIGS. 1and 3 is thus produced. Thereafter, a buried type laser is producedburied in a groove produced at an end portion of the semi-insulating InPgrowth layer 30 at the side opposite to the n-type InP layer 50,according to the present invention.

While in the above-illustrated embodiment InP series compoundsemiconductor is employed, other compound semiconductors such as GaAsmay be used.

As is evident from the foregoing description, according to the presentinvention, a vertical aperture is produced at a main surface of asemi-insulating or insulating substrate, a transverse aperture isproduced communicating with this vertical aperture, a conductingsemiconductor layer is buried in the vertical aperture and thetransverse aperture, a groove reaching the semiconductor layer from thesurface of the substrate is produced above an end portion of thetransverse aperture, and a light emitting element is produced, buried inthe groove in such a manner that the light emitting region thereof isburied in the groove and is connected to the buried semiconductor layer.Since the light emitting region is buried in the substrate, no pnjunction exists at the periphery of the light emitting region, therebyeliminating leakage current, and a semiconductor light emitting deviceof quite low parasitic capacitance is obtained at high yield.Furthermore, the p and n side electrodes can be provided on a mainsurface of the substrate so that a planar structure is obtained. Thisproperty results in simplicity in integration with other electronicelements and enhancement in integration density.

What is claimed is:
 1. A process for producing a semiconductor lightemitting device comprising the steps of:etching a semi-insulating orinsulating substrate to produce a first aperture; depositing photoresistat desired positions on said substrate and on a bottom portion of saidfirst aperture; etching said semi-insulating or insulating substrate toproduce a transverse aperture transverse to and communicating with saidfirst aperture; growing a conducting semiconductor layer in said firstaperture and in said transverse aperture; etching said semi-insulatingor insulating substrate to expose said conducting semiconductor layer insaid transverse aperture at a portion of said transverse aperture,producing a groove; growing semiconductor layers functioning as a lightemitting element and including a light emitting region in said groove;and depositing electrodes on the surface of said semiconductor layergrown in said first aperture and on the surface of said semiconductorlayers in said groove, respectively.
 2. A process of producing asemiconductor light emitting device as defined in claim 1, wherein saidsemi-insulating or insulating substrate comprises InP.
 3. A process ofproducing a semiconductor light emitting device as defined in claim 1,wherein said semi-insulating or insulating substrate comprises GaAs.